K4J55323QI-BC14

Product Summary

The K4J55323QI-BC14 is a 268,435,456 bits, hyper synchronous data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 8.0GB/s/chip. I/O transactions are possible on both edges of the clock cycle. Range of operating frequencies, and programmable latencies allow the K4J55323QI-BC14 to be useful for a variety of high performance memory system applications.

Parametrics

K4J55323QI-BC14 absolute maximum ratings: (1)Voltage on any pin relative to Vss, VIN, VOUT: -0.5 ~ VDDQ + 0.5V V; (2)Voltage on VDD supply relative to Vss, VDD: -0.5 ~ 2.5 V; (3)Voltage on VDDQ supply relative to Vss, VDDQ: -0.5 ~ 2.5 V; (4)MAX Junction Temperature, TJ: +125℃; (5)Storage temperature, TSTG: -55 ~ +150℃; (6)Power dissipation, PD: 4 W; (7)Short Circuit Output Current, IOS: 50 mA.

Features

K4J55323QI-BC14 features: (1)1.8V + 0.1V power supply for device operation for -BC; (2)1.8V + 0.1V power supply for I/O interface for -BC; (3)1.9V + 0.1V power supply for device operation for -BJ; (4)1.9V + 0.1V power supply for I/O interface for -BJ; (5)On-Die Termination (ODT); (6)Output Driver Strength adjustment by EMRS; (7)Calibrated output drive; (8)1.8V Pseudo Open drain compatible inputs/outputs; (9)4 internal banks for concurrent operation; (10)Differential clock inputs (CK and CK); (11)Commands entered on each positive CK edge; (12)CAS latency : 7, 8, 9, 10, 11, 12 (clock); (13)Programmable Burst length : 4 and 8; (14)Programmable Write latency : 1, 2, 3, 4, 5, 6 and 7 (clock); (15)Single ended READ strobe (RDQS) per byte; (16)Single ended WRITE strobe (WDQS) per byte; (17)RDQS edge-aligned with data for READs; (18)WDQS center-aligned with data for WRITEs; (19)Data Mask(DM) for masking WRITE data; (20)Auto & Self refresh modes; (21)Auto Precharge option; (22)32ms, auto refresh (4K cycle) ; (23)136 Ball FBGA; (24)Maximum clock frequency up to 1000MHz; (25)Maximum data rate up to 2.0Gbps/pin; (26)DLL for outputs; (27)Boundary scan function with SEN pin; (28)Mirror function with MF pin.

Diagrams