PC28F256P30B85

StrataFlash Embedded Memory, PC28F256P30B85, –0.5 V to +4.1 V, 100 mA, BGA

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PartNumber:: PC28F256P30B85

Brand:: Intel Corporation - Intel | Pack: BGA | D/C: 10+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2012-07-03

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Product Summary

The PC28F256P30B85 is a StrataFlash Embedded Memory. Offered in 64-Mbit up through 1-Gbit densities, the PC28F256P30B85 brings reliable, two-bit-per-cell storage technology to the embedded flash market segment. Benefits include more density in less space, high-speed interface, lowest cost-per-bit NOR device, and support for code and data storage. Features of the PC28F256P30B85 include high-performance synchronous burst read mode, fast asynchronous access times, low power, flexible security options, and three industry standard package choices. The PC28F256P30B85 is manufactured using Intel 130 nm ETOX VIII process technology.

Parametrics

PC28F256P30B85 absolute maximum ratings: (1)Temperature under bias: –40 to +85℃; (2)Storage temperature: –65 to +125℃; (3)Voltage on any signal (except VCC, VPP): –0.5 V to +4.1 V; (4)VPP voltage: –0.2 V to +10 V; (5)VCC voltage: –0.2 V to +2.5 V; (6)VCCQ voltage: –0.2 V to +4.1 V; (7)Output short circuit current: 100 mA.

Features

PC28F256P30B85 features: (1)85/88 ns initial access; (2)40 MHz with zero wait states, 20 ns clock-to-data output synchronous-burst read mode; (3)25 ns asynchronous-page read mode; (4)4-, 8-, 16-, and continuous-word burst mode; (5)Buffered Enhanced Factory Programming (BEFP) at 5 μs/byte (Typ); (6)1.8 V buffered programming at 7 μs/byte (Typ); (7)Multi-Level Cell Technology: Highest Density at Lowest Cost; (8)Asymmetrically-blocked architecture; (9)Four 32-KByte parameter blocks: top or bottom configuration; (10)128-KByte main blocks.