(Singapore)
Product Summary
The K4X51163PE-FGC3 is a 32M×16 Mobile DDR SDRAM.
Parametrics
K4X51163PE-FGC3 absolute maximum ratings: (1)Voltage on any pin relative to VSS, VIN, VOUT: -0.5 ~ 2.7 V; (2)Voltage on VDD supply relative to VSS, VDD: -0.5 ~ 2.7 V; (3)Voltage on VDDQ supply relative to VSS, VDDQ: -0.5 ~ 2.7 V; (4)Storage temperature, TSTG: -55 ~ +150℃; (5)Power dissipation, PD: 1.0 W; (6)Short circuit current, IOS: 50 mA.
Features
K4X51163PE-FGC3 features: (1)VDD/VDDQ = 1.8V/1.8V; (2)Double-data-rate architecture; two data transfers per clock cycle; (3)Bidirectional data strobe(DQS); (4)Four banks operation; (5)Differential clock inputs(CK and CK); (6)MRS cycle with address key programs; (7) EMRS cycle with address key programs; (8) Internal Temperature Compensated Self Refresh; (9)All inputs except data & DM are sampled at the positive going edge of the system clock(CK); (10)Data I/O transactions on both edges of data strobe, DM for masking; (11)Edge aligned data output, center aligned data input; (12)No DLL; CK to DQS is not synchronized; (13)DM0 - DM3 for write masking only; (14)Auto refresh duty cycle.
Diagrams
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