(Singapore)
Product Summary
The HY27UG088G5M-TPCB is a 1G×8bit NAND Flash Memory with spare 32M×8 bit capacity. The HY27UG088G5M-TPCB is offered in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. The HY27UG088G5M-TPCB contains 8192 blocks, composed by 64 pages consisting in two NAND structures of 32 series connected Flash cells.
Parametrics
HY27UG088G5M-TPCB absolute maximum ratings: (1)TA, Ambient Operating Temperature (Commercial Temperature Range): 0 to 70℃; (2)Ambient Operating Temperature (Extended Temperature Range): -25 to 85℃; (3)Ambient Operating Temperature (Industry Temperature Range): -40 to 85℃; (4)TBIAS, Temperature Under Bias: -50 to 125℃; (5)TSTG, Storage Temperature: -65 to 150℃; (6)VIO, Input or Output Voltage: -0.6 to 4.6 V; (7)Vcc, Supply Voltage: -0.6 to 4.6 V.
Features
HY27UG088G5M-TPCB features: (1)high density nand flash memories; (2)Cost effective solutions for mass storage applications; (3)nand interface; (4)Multiplexed Address/ Data; (5)Pinout compatibility for all densities; (6)supply voltage: 3.3V device: VCC = 2.7 to 3.6V : HY27UG088G(5/D)M; (7)memory cell array= (2K+ 64) Bytes x 64 Pages x 8,192 Blocks; (8)copy back program mode: Fast page copy without external buffering; (9)cache program mode: Internal Cache Register to improve the program throughput; (10)FAST BLOCK ERASE: Block erase time: 2ms (Typ.).
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